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Proceedings Paper

Electrically pumped InAs single quantum dot emitter
Author(s): A. Lochmann; E. Stock; O. Schulz; F. Hopfer; D. Bimberg; V. A. Haisler; A. I. Toropov; A. K. Bakarov; A. K. Kalagin; M. Scholz; S. Büttner; O. Benson
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Paper Abstract

We report on a miniature solid state emitter structure, which allows electrical pumping of only one single InAs quantum dot (QD) grown in the Stranski-Krastanow mode. The emitter is based on a single layer of low density (~108 cm-2) QDs grown by Molecular Beam Epitaxy and a submicron AlOX current aperture defined by selective oxidation of high aluminium content AlGaAs layers. The device demonstrates strongly monochromatic polarized emission of the single QD exciton at subnanoampere current pumping. No other emission is observed across a spectral range of 500 nm, proving that indeed just one single QD is contributing. Correlation measurements of the emitted photons show a clear antibunching behavior.

Paper Details

Date Published: 6 July 2006
PDF: 6 pages
Proc. SPIE 6350, Workshop on Optical Components for Broadband Communication, 63500F (6 July 2006); doi: 10.1117/12.692764
Show Author Affiliations
A. Lochmann, Technische Univ. Berlin (Germany)
E. Stock, Technische Univ. Berlin (Germany)
O. Schulz, Technische Univ. Berlin (Germany)
F. Hopfer, Technische Univ. Berlin (Germany)
D. Bimberg, Technische Univ. Berlin (Germany)
V. A. Haisler, Institute of Semiconductor Physics (Russia)
A. I. Toropov, Institute of Semiconductor Physics (Russia)
A. K. Bakarov, Institute of Semiconductor Physics (Russia)
A. K. Kalagin, Institute of Semiconductor Physics (Russia)
M. Scholz, Humboldt Univ. zu Berlin (Germany)
S. Büttner, Humboldt Univ. zu Berlin (Germany)
O. Benson, Humboldt Univ. zu Berlin (Germany)


Published in SPIE Proceedings Vol. 6350:
Workshop on Optical Components for Broadband Communication
Pierre-Yves Fonjallaz; Thomas P. Pearsall, Editor(s)

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