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Proceedings Paper

Polarization effects: EAPSM vs. TT EAPSM
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Paper Abstract

Today novel RET solutions are gaining more and more attention from the lithography community that is facing new challenges in attempting to meet the new requirement of the SIA roadmap. Immersion, high NA, polarization, and mask topography, are becoming common place terminology as lithographers continue to explore these areas. Here with, we compare a traditional 6% MoSi based EAPSM reticle and a high transmission solution made of a SiON/Cr film stack. Insights into the manufacturability of high transmission material are provided. Test patterns have been analyzed to determine the overall impact of imaging performance when used with immersion scanners and polarized light. Some wafer results provide reliability of simulations, which are used to make further investigation on polarization and immersion effects.

Paper Details

Date Published: 21 June 2006
PDF: 12 pages
Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 628109 (21 June 2006); doi: 10.1117/12.692729
Show Author Affiliations
Nicoló Morgana, Photronics (France)
Will Conley, Freescale Semiconductor, Inc. (United States)
Michael Cangemi, Photronics at IMEC (Belgium)
Marc Cangemi, Photronics (United States)
Bryan S. Kasprowicz, Photronics (United States)

Published in SPIE Proceedings Vol. 6281:
22nd European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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