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Proceedings Paper

Long wavelength integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity structure
Author(s): Xiaomin Ren; Hui Huang; Yongqing Huang; Xingyan Wang; Qi Wang; Wenjuan Wang; Ang Miao; Yiqun Li; Hailin Cui; Peida Ye; Joe C. Campbell
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Paper Abstract

Integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity (OMITMiC) structure, or OMITMiC wavelength-selective photodetector, is a kind of novel integrated multifunction optoelectronic device which was proposed in 1996 and first realized with GaAs-based materials for short wavelength (less than 1μm) operation in 2001. Recently, after great efforts on developing controllable self-retreating dynamic mask (CSRDM) wet etching method for InP-based epitaxial layer and low temperature InP/GaAs wafer bonding technique, such a device operating at long wavelength region (1550nm) had also been successfully demonstrated and the measurement results shown that it features high-speed (12GHz with a mesa area of 40×36 μm2), high quantum efficiency (66%~78.4%), ultra-narrow spectral linewidth (0.6 nm) and wide range tuning (more than 10 nm ) simultaneously. In addition, a long wavelength monolithic OMITMiC photodetector with GaInNAs absorption layer has also been demonstrated. These achievements could have a significant impact on wavelength-division-multiplexed (WDM) optical fiber transmission systems and networks.

Paper Details

Date Published: 6 October 2006
PDF: 6 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 635218 (6 October 2006); doi: 10.1117/12.692714
Show Author Affiliations
Xiaomin Ren, Beijing Univ. of Posts and Telecommunications (China)
Hui Huang, Beijing Univ. of Posts and Telecommunications (China)
Yongqing Huang, Beijing Univ. of Posts and Telecommunications (China)
Xingyan Wang, Beijing Univ. of Posts and Telecommunications (China)
Qi Wang, Beijing Univ. of Posts and Telecommunications (China)
Wenjuan Wang, Beijing Univ. of Posts and Telecommunications (China)
Ang Miao, Beijing Univ. of Posts and Telecommunications (China)
Yiqun Li, Beijing Univ. of Posts and Telecommunications (China)
Hailin Cui, Beijing Univ. of Posts and Telecommunications (China)
Peida Ye, Beijing Univ. of Posts and Telecommunications (China)
Joe C. Campbell, Univ. of Virginia (United States)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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