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Proceedings Paper

The magic of 4X mask reduction
Author(s): Michael Lercel
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Paper Abstract

Although changing the mask reduction factor from 4X to a larger value offers several technical advantages, previous attempts to enact this change have not identified enough clear technical advantages to overcome the impact to productivity. Improvements in mask manufacturing, mask polarization effects, and optics cost have not been thought to be sufficient reason to accept a reduced throughput and field size. This paper summarizes the latest workshop and discussion revisiting the mask reduction factor for 32nm half-pitch lithography with hyper-numerical aperture (NA) optical or extreme ultraviolet lithography (EUVL). The workshop consensus was strongly in favor of maintaining the current magnification ratio and field size as long as mask costs can be contained.

Paper Details

Date Published: 21 June 2006
PDF: 7 pages
Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810R (21 June 2006); doi: 10.1117/12.692707
Show Author Affiliations
Michael Lercel, IBM (United States)
SEMATECH (United States)

Published in SPIE Proceedings Vol. 6281:
22nd European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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