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Proceedings Paper

The performance of positive and negative CAR mask exposed by Leica 20 KeV writing system
Author(s): Chen-Rui Tseng; Eng-Ann Gan; David Lee; Chun-Hung Wu; Shiuh-Bin Chen
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Paper Abstract

Analyses of the effects of positive and negative chemically amplified resist (CAR) exposed by Leica ZBA31H+ 20 KeV shaped e-beam lithography tool are investigated using CD-SEM. The characterization data will present improved resolution, global CD uniformity and CD linearity. During last few years, several resists were used for masks making. The e-beam resists as ZEP and PBS resists were used on Leica low acceleration voltage e-beam system previous years. In the present investigation, the CA resist exposed by Leica ZBA31H+ 20 KeV writing system has been investigated. The objective of the present work is directed toward that the CAR process improves higher throughput than ZEP resist and promotes better performances than both ZEP and PBS resists. For the high exposed loading, to minimize writing time and fogging effect, and to control mean CD and improve global CD uniformity, the negative CA resist performs better than positive CA resist. TMC provides the actual measurement data obtained on CD-SEM for negative CA resist exposed by Leica 20 KeV writing system. In this paper, we will also provide the applicable profile results obtained on CD-SEM to confirm the feasibility for CAR mask be exposed by Leica 20 KeV system.

Paper Details

Date Published: 21 June 2006
PDF: 14 pages
Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810L (21 June 2006); doi: 10.1117/12.692646
Show Author Affiliations
Chen-Rui Tseng, Taiwan Mask Corp. (Taiwan)
Eng-Ann Gan, Taiwan Mask Corp. (Taiwan)
David Lee, Taiwan Mask Corp. (Taiwan)
Chun-Hung Wu, Taiwan Mask Corp. (Taiwan)
Shiuh-Bin Chen, Taiwan Mask Corp. (Taiwan)


Published in SPIE Proceedings Vol. 6281:
22nd European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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