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Proceedings Paper

Process development for EUV mask production
Author(s): Tsukasa Abe; Akiko Fujii; Shiho Sasaki; Hiroshi Mohri; Naoya Hayashi; Tsutomu Shoki; Takeyuki Yamada; Osamu Nozawa; Ryo Ohkubo; Masao Ushida
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Paper Abstract

Absorber layer patterning process for low reflectivity tantalum boron nitride (LR-TaBN) absorber layer and chromium nitride (CrN) buffer layer were improved to satisfy high resolution pattern and high level critical dimension (CD) control. To make 100nm and smaller pattern size, under 300nm resist thickness was needed because of resist pattern collapse issue. We developed absorber layer dry etching process for 300nm thickness resist. Absorber layer patterning was done by a consequence of carbon fluoride gas process and chlorine gas process. We evaluated both gas processes and made clear each dry etching character. Sufficient resist selectivity, vertical side wall, good CD control and low buffer layer damage were obtained. Then, we evaluated how buffer layer dry etching affects EUV reflectivity. Finally, we evaluated EUV mask pattern defect inspection and defect repair. Sufficient contrast of mask pattern image and good repair result were obtained using DUV inspection tool and AFM nano-machining tool, respectively.

Paper Details

Date Published: 20 October 2006
PDF: 7 pages
Proc. SPIE 6349, Photomask Technology 2006, 63493G (20 October 2006); doi: 10.1117/12.692519
Show Author Affiliations
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)
Akiko Fujii, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Takeyuki Yamada, HOYA Corp. (Japan)
Osamu Nozawa, HOYA Corp. (Japan)
Ryo Ohkubo, HOYA Corp. (Japan)
Masao Ushida, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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