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Proceedings Paper

HX-PES study of rewritable phase-change recording media
Author(s): Tsukasa Nakai; Masahiko Yoshiki; Noritake Ohmachi
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Paper Abstract

The influence of the interface layer to the chemical and electronic states of a phase-change recording material, GeBiTe (GBT) alloy, used in the high-speed rewritable HD DVD media was investigated for the first time using the hard x-ray photoelectron spectroscopy (HX-PES). The density of states (DOS) for the valence band of the amorphous state without an interface layer was smaller than that of the crystalline state. The band-edge energy of the amorphous state without an interface layer was lower by about 0.5 eV than that of the crystalline state. On the other hand, the DOS and the band-edge energy of the amorphous state of GBT with interface layers were almost same as that of the crystalline state, respectively. This result may lead to almost the same career density for electrical conduction for the crystal as the amorphous, which is totally unexpected thus very interesting because the atomic arrangements should differ from each other. We speculate that this effect is a factor for a high-speed crystallization.

Paper Details

Date Published: 22 June 2006
PDF: 7 pages
Proc. SPIE 6282, Optical Data Storage 2006, 62822E (22 June 2006); doi: 10.1117/12.692281
Show Author Affiliations
Tsukasa Nakai, Toshiba Corp. (Japan)
Masahiko Yoshiki, Toshiba Corp. (Japan)
Noritake Ohmachi, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 6282:
Optical Data Storage 2006
Ryuichi Katayama; Tuviah E. Schlesinger, Editor(s)

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