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Proceedings Paper

High-temperature operation of a 1.2-μm single-transverse-mode highly strained GaInAs/GaAs QW laser
Author(s): Shigeru Kanazawa; Kazutaka Takeda; Tomoyuki Miyamoto; Fumio Koyama
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Paper Abstract

We presented the high temperature operation of 1200-nm band highly strained GaInAs/GaAs ridge-waveguide lasers. Active layer consists in three quantum wells with highly strained GaInAs. The In composition is 32%. The maximum operating temperature reaches at over 200°C and temperature characteristic T0 is 222K at 30-80°C with continuous wave operations, showing excellent temperature characteristics of highly strained QWs. We obtained a relaxation oscillation frequency of 2 GHz at 170°C.

Paper Details

Date Published: 5 October 2006
PDF: 6 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520L (5 October 2006); doi: 10.1117/12.691841
Show Author Affiliations
Shigeru Kanazawa, Tokyo Institute of Technology (Japan)
Kazutaka Takeda, Tokyo Institute of Technology (Japan)
Tomoyuki Miyamoto, Tokyo Institute of Technology (Japan)
Fumio Koyama, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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