Share Email Print

Proceedings Paper

Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections
Author(s): M. H. Kwakernaak; W. K. Chan; B. Kharas; N. Maley; H. Mohseni; L. Yang; D. Capewell; V. Frantz; T. Mood; G. A. Pajer; D. A. Ackerman; J. H. Abeles; A. M. Braun; J. G. Kim; D. S. Bang; D. H. Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Low loss, single mode rib waveguides, based on PECVD deposited multi-layer amorphous silicon are fabricated. These waveguide are refractive index and mode-matched to III/V laser waveguides. Methods for monolithic integration of these passive amorphous silicon waveguides with InGaAsP/InP gain sections are demonstrated. Results of a multi-wavelength laser based on an amorphous silicon arrayed waveguide grating integrated on a single chip with InGaAsP gain sections are presented.

Paper Details

Date Published: 6 October 2006
PDF: 5 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 635217 (6 October 2006); doi: 10.1117/12.691710
Show Author Affiliations
M. H. Kwakernaak, Sarnoff Corp. (United States)
W. K. Chan, Sarnoff Corp. (United States)
B. Kharas, Sarnoff Corp. (United States)
N. Maley, Sarnoff Corp. (United States)
H. Mohseni, Sarnoff Corp. (United States)
Northwestern Univ. (United States)
L. Yang, Sarnoff Corp. (United States)
D. Capewell, Sarnoff Corp. (United States)
V. Frantz, Sarnoff Corp. (United States)
T. Mood, Sarnoff Corp. (United States)
G. A. Pajer, Sarnoff Corp. (United States)
Rider Univ. (United States)
D. A. Ackerman, Sarnoff Corp. (United States)
J. H. Abeles, Sarnoff Corp. (United States)
A. M. Braun, Sarnoff Corp. (United States)
J. G. Kim, Sarnoff Corp. (United States)
D. S. Bang, Dewell Electronic (South Korea)
D. H. Lee, Dewell Electronic (South Korea)

Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

© SPIE. Terms of Use
Back to Top