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Proceedings Paper

Enhanced terahertz emission from InAs quantum dots on GaAs
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Paper Abstract

Optically pumped terahertz emission has been observed in a wide range of semiconductors. We show that InAs quantum dots on GaAs can be used to significantly enhance terahertz emission compared with a bare GaAs surface.

Paper Details

Date Published: 6 October 2006
PDF: 4 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521Z (6 October 2006); doi: 10.1117/12.691628
Show Author Affiliations
Hongkyu Park, Pohang Univ. of Science and Technology (South Korea)
Jeonghoi Kim, Pohang Univ. of Science and Technology (South Korea)
Euna Jung, Pohang Univ. of Science and Technology (South Korea)
Wonjun Choi, Korea Institute of Science and Technology (South Korea)
Jungil Lee, Korea Institute of Science and Technology (South Korea)
Haewook Han, Pohang Univ. of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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