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Proceedings Paper

Intracavity-contacted resonant cavity enhanced photodetectors based on VCSEL structure
Author(s): Il-Sug Chung; Jin-Kyung Choi; Ki-Soo Chang; Kamal Alameh; Yong Tak Lee
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Paper Abstract

Intracavity-contacted resonant cavity enhanced photodetectors (IC RCEPDs) have been fabricated for monolithic integration with IC VCSELs. A low parasitic capacitance of 0.39 pF and an extrinsic 3-dB bandwidth of 9 GHz are demonstrated by using coplanar metal contacts. Optimization issues on device and epi designs are discussed. The largest frequency saturation photocurrent below which the extrinsic 3-dB bandwidth exceeds 6.5 GHz is 4.2 μA.

Paper Details

Date Published: 6 October 2006
PDF: 8 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521L (6 October 2006); doi: 10.1117/12.691608
Show Author Affiliations
Il-Sug Chung, Gwangju Institute of Science and Technology (South Korea)
Jin-Kyung Choi, Gwangju Institute of Science and Technology (South Korea)
Ki-Soo Chang, Gwangju Institute of Science and Technology (South Korea)
Kamal Alameh, Edith Cowan Univ. (Australia)
Yong Tak Lee, Gwangju Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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