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Proceedings Paper

Lasing characteristics of 1.3-μm atomic layer epitaxy quamtum dot laser diode
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Paper Abstract

We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm2 under a pulsed operation and 247 A/cm2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.

Paper Details

Date Published: 6 October 2006
PDF: 8 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63522G (6 October 2006); doi: 10.1117/12.691596
Show Author Affiliations
Kwang Woong Kim, Korea Institute of Science and Technology (South Korea)
Korea Univ. (South Korea)
Nam Ki Cho, Korea Institute of Science and Technology (South Korea)
Jin Dong Song, Korea Institute of Science and Technology (South Korea)
Won Jun Choi, Korea Institute of Science and Technology (South Korea)
Jung Il Lee, Korea Institute of Science and Technology (South Korea)
Jung Ho Park, Korea Univ. (South Korea)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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