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Proceedings Paper

Epitaxy of GaN LEDs on large substrates: Si or sapphire?
Author(s): A. Dadgar; C. Hums; A. Diez; F. Schulze; J. Bläsing; A. Krost
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Paper Abstract

We present first results on the limits of GaN growth on large diameter sapphire and the challenges that have to be solved for a successful growth of high power LEDs on silicon substrates. Up to 5.4 μm thick crack-free GaN on Si(111) LED structures were grown by metalorganic chemical vapor phase epitaxy. The FWHM of the GaN (0002) ω scan in x-ray diffraction amounts to 380 arcsec. On Si substrates, we achieve low curvatures with radii > 50 m, which is important for a successful processing of the samples on large diameter substrates. Additionally, a low curvature during InGaN multi-quantum-well growth is achieved and enables the growth of homogenous InGaN layers. The main difficulty for GaN-on-Si is light extraction, which leads to an approximately three- to four-fold reduction in direct comparison with GaN LEDs on sapphire.

Paper Details

Date Published: 21 September 2006
PDF: 8 pages
Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550R (21 September 2006); doi: 10.1117/12.691576
Show Author Affiliations
A. Dadgar, Otto-von-Guericke-Univ. Magdeburg (Germany)
AZZURRO Semiconductors AG (Germany)
C. Hums, Otto-von-Guericke-Univ. Magdeburg (Germany)
AZZURRO Semiconductors AG (Germany)
A. Diez, Otto-von-Guericke-Univ. Magdeburg (Germany)
F. Schulze, Otto-von-Guericke-Univ. Magdeburg (Germany)
J. Bläsing, Otto-von-Guericke-Univ. Magdeburg (Germany)
A. Krost, Otto-von-Guericke-Univ. Magdeburg (Germany)
AZZURRO Semiconductors AG (Germany)

Published in SPIE Proceedings Vol. 6355:
Advanced LEDs for Solid State Lighting
Chang-Hee Hong; Tsunemasa Taguchi; Jung Han; Lianghui Chen, Editor(s)

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