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Proceedings Paper

Analog RF-optic performance of 60 GHz electroabsorption duplexer module
Author(s): J. S. Sim; K. S. Choi; Y. D. Chung; S. B. Kim; J. Kim; Y. S. Kang
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Paper Abstract

We proposed the vertical mode coupling structure (VMCS) for monolithic integration of optoelectronic devices. The electroabsorption duplexer (EAD) chip was fabricated by monolithically integrating both a waveguide photodiode (PD) and an electroabsorption modulator (EAM) in association with traveling wave electrodes. Using an EAD we presented a transceiver (TRx) module for dual functions of both electrical-to-optical (E/O) and optical-to-electrical (O/E) conversions at 60GHz band. The responsivity and the extinction ration of the EAD were 0.72 A/W and 20 dB at -4 Vdc, respectively. The coupling loss between the optical fiber and the device facet was as small as 1.96 dB. The small signal 3 dB bandwidth of E/O and O/E response was 25 GHz and 8 GHz, respectively. We also investigated the issues of RF packaging in which the optoelectronic and electronic amplifier devices were co-packaged in a single housing.

Paper Details

Date Published: 6 October 2006
PDF: 9 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63523P (6 October 2006); doi: 10.1117/12.691552
Show Author Affiliations
J. S. Sim, Electronics and Telecommunications Research Institute (South Korea)
K. S. Choi, Electronics and Telecommunications Research Institute (South Korea)
Y. D. Chung, Electronics and Telecommunications Research Institute (South Korea)
S. B. Kim, Electronics and Telecommunications Research Institute (South Korea)
J. Kim, Electronics and Telecommunications Research Institute (South Korea)
Y. S. Kang, KATS (South Korea)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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