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Proceedings Paper

Modelling of MSM photodetectors using RF measurement technique
Author(s): Cheolung Cha; Zhaoran Huang
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Paper Abstract

A multi-giga bits circuit-level model of a thin film metal-semiconductor-metal photodetector (MSM PD) for high speed optical receiver (Rx) was obtained using the RF measurement technique and widely used optimization routines in simulation tool such as ADS and SPICE. On-wafer measurement-based modeling technique was employed to exactly characterize DUTs in this paper. On-wafer calibration standard structures such as NiCr 50 Ω of load, short, and open were also fabricated and optimized using laser trimming for exact measurements. The obtained circuit-level model shows good agreement with measured s-parameters and wide eye open up to 20Gbps.

Paper Details

Date Published: 6 October 2006
PDF: 8 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63523M (6 October 2006); doi: 10.1117/12.691452
Show Author Affiliations
Cheolung Cha, Korea Electronics Technology Institute (South Korea)
Zhaoran Huang, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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