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Proceedings Paper

Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes
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Paper Abstract

We investigated the dependency of waveguide structures on ripples of far-field patterns in 405nm GaN-based laser diodes theoretically and experimentally. As the n-type cladding layer thickness decreases, the passive waveguide modes strongly interact with an active layer mode. This suggests that the thicknesses of n-AlGaN/GaN superlattice clad and n-GaN waveguide layers have significant influences on FFP ripples. We successfully obtained very smooth far-field patterns perpendicular to the junction plane by optimizing both n-AlGaN/GaN clad layer thickness and n-GaN waveguide layer thickness.

Paper Details

Date Published: 6 October 2006
PDF: 8 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521J (6 October 2006); doi: 10.1117/12.691215
Show Author Affiliations
Sungmin Hwang, Hanyang Univ. (South Korea)
Jongin Shim, Hanyang Univ. (South Korea)
Hanyoul Ryu, Samsung Advanced Institute of Technology (South Korea)
Kyung-ho Ha, Samsung Advanced Institute of Technology (South Korea)
Junghye Chae, Samsung Advanced Institute of Technology (South Korea)
Okhyun Nam, Samsung Advanced Institute of Technology (South Korea)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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