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Proceedings Paper

Advanced photomask repair technology for 65-nm lithography
Author(s): Fumio Aramaki; Tomokazu Kozakai; Masashi Muramatsu; Yasuhiko Sugiyama; Yoshihiro Koyama; Osamu Matsuda; Katsumi Suzuki; Mamoru Okabe; Toshio Doi; Ryoji Hagiwara; Tatsuya Adachi; Anto Yasaka; Yoshiyuki Tanaka; Osamu Suga; Naoki Nishida; Youichi Usui
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Paper Abstract

We have reported the FIB repair system with low acceleration voltage is applicable to 65nm generation photomasks. Repair technology beyond 65nm generation photomasks requires higher edge placement accuracy and more accurate shape. We developed two new functions, "Two Step Process" and "CAD Data Copy". "Two Step Process" consists of primary process and finishing process. The primary process is conventional process, but the finishing process is precise process to control repaired edge position with sub-pixel order. "Two Step Process" achieved edge placement repeatability less than 3nm in 3sigma. At "CAD Data Copy", defects are recognized with comparison between shape captured from a SIM image and that imported from a CAD system. "CAD Data Copy" reproduced nanometer features with nanometer accuracy. Thus the FIB repair system with low acceleration voltage achieves high performance enough to repair photomasks beyond 65nm generation by using "Two Step Process" and "CAD Data Copy".

Paper Details

Date Published: 23 October 2006
PDF: 7 pages
Proc. SPIE 6349, Photomask Technology 2006, 63491E (23 October 2006); doi: 10.1117/12.691195
Show Author Affiliations
Fumio Aramaki, SII NanoTechnology Inc. (Japan)
Tomokazu Kozakai, SII NanoTechnology Inc. (Japan)
Masashi Muramatsu, SII NanoTechnology Inc. (Japan)
Yasuhiko Sugiyama, SII NanoTechnology Inc. (Japan)
Yoshihiro Koyama, SII NanoTechnology Inc. (Japan)
Osamu Matsuda, SII NanoTechnology Inc. (Japan)
Katsumi Suzuki, SII NanoTechnology Inc. (Japan)
Mamoru Okabe, SII NanoTechnology Inc. (Japan)
Toshio Doi, SII NanoTechnology Inc. (Japan)
Ryoji Hagiwara, SII NanoTechnology Inc. (Japan)
Tatsuya Adachi, SII NanoTechnology Inc. (Japan)
Anto Yasaka, SII NanoTechnology Inc. (Japan)
Yoshiyuki Tanaka, Semiconductor Leading Edge Technologies, Inc. (Japan)
Osamu Suga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Naoki Nishida, Hoya Corp. (Japan)
Youichi Usui, Hoya Corp. (Japan)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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