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Proceedings Paper

The effect of processes on the reliability of GaN-based light emitting diodes
Author(s): Zhiguo Xiao; Xiaoguang He; Kevin Ma; Xiangdong Chen; Shengli Wu; Zhijie Ke
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Paper Abstract

According to our rich experiences on manufacturing of high reliability GaN based Light Emitting Diodes, we try to expatiate the relations between processes and device reliability on five aspects in this paper. In addition, we lay out some of our solutions on the five aspects and show our stable device.

Paper Details

Date Published: 28 September 2006
PDF: 9 pages
Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550K (28 September 2006); doi: 10.1117/12.691155
Show Author Affiliations
Zhiguo Xiao, Dalian Luming Science and Technology Group Co., Ltd. (China)
Xiaoguang He, Dalian Lumei Optoelectronics Corp. (China)
Kevin Ma, Dalian Lumei Optoelectronics Corp. (China)
Xiangdong Chen, Dalian Lumei Optoelectronics Corp. (China)
Shengli Wu, Dalian Lumei Optoelectronics Corp. (China)
Zhijie Ke, Dalian Lumei Optoelectronics Corp. (China)

Published in SPIE Proceedings Vol. 6355:
Advanced LEDs for Solid State Lighting
Chang-Hee Hong; Tsunemasa Taguchi; Jung Han; Lianghui Chen, Editor(s)

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