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Proceedings Paper

Optimisation of quantum dot infrared photodetectors (QDIPs) for imaging applications
Author(s): P. Aivaliotis; E. Zibik; L. R. Wilson; J. P. R. David; M. Hopkinson; C. Groves
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Paper Abstract

Here we present an engineering study showing how altering various aspects of the growth parameters of an InAs dot within an InGaAs well (DWELL) QDIP affects its performance. Amongst our findings, we show capability to control the absorption wavelength both during and after growth by altering the size of the dots and via the quantum confined Stark effect respectively. The addition of AlGaAs current blocking layers is shown to reduce deleterious dark current by over two orders of magnitude.

Paper Details

Date Published: 5 October 2006
PDF: 9 pages
Proc. SPIE 6395, Electro-Optical and Infrared Systems: Technology and Applications III, 63950B (5 October 2006); doi: 10.1117/12.690049
Show Author Affiliations
P. Aivaliotis, Sheffield Univ. (United Kingdom)
E. Zibik, Sheffield Univ. (United Kingdom)
L. R. Wilson, Sheffield Univ. (United Kingdom)
J. P. R. David, Sheffield Univ. (United Kingdom)
M. Hopkinson, Sheffield Univ. (United Kingdom)
C. Groves, Sheffield Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 6395:
Electro-Optical and Infrared Systems: Technology and Applications III
Ronald G. Driggers; David A. Huckridge, Editor(s)

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