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Proceedings Paper

IR laser induced heating in Hg0.72Cd0.28Te
Author(s): Asta Villanger; Trond Brudevoll; Knut Stenersen
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Paper Abstract

We present results from a numerical study on heating in Hg0.72Cd0.28Te induced by 4.2 μm laser pulses in the μs regime. A number of highly nonlinear mechanisms contribute to the heating process, their relative importance being dependent on the instantaneous irradiance and the material temperature. The mechanisms include one- and two-photon absorption across the band gap, inter-valence band absorption between the light- and heavy hole bands, electron-hole recombination, free-carrier absorption, hot-carrier generation, and refractive index changes. A special feature of this material is the fact that the direct band gap increases with temperature. This eventually terminates one-photon absorption processes from the valence to the conduction band. The varying band gap also introduces changes in the electron- and light hole masses and thereby in the separation between the light- and heavy hole bands, thus strongly affecting inter-valence band absorption. Therefore first principles electronic structure calculations were used to determine the band structure and the inter-valence band absorption. The simulations also show that hot carrier effects can have a significant influence on the amount of energy the material can absorb.

Paper Details

Date Published: 5 October 2006
PDF: 12 pages
Proc. SPIE 6397, Technologies for Optical Countermeasures III, 63970B (5 October 2006); doi: 10.1117/12.689696
Show Author Affiliations
Asta Villanger, Norwegian Defence Research Establishment (Norway)
Trond Brudevoll, Norwegian Defence Research Establishment (Norway)
Knut Stenersen, Norwegian Defence Research Establishment (Norway)

Published in SPIE Proceedings Vol. 6397:
Technologies for Optical Countermeasures III
David H. Titterton, Editor(s)

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