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Proceedings Paper

Recent development on silicon-based Raman lasers and amplifiers
Author(s): Haisheng Rong; Ying-Hao Kuo; Shengbo Xu; Oded Cohen; Omri Raday; Mario Paniccia
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Paper Abstract

We present a monolithic integrated Raman silicon laser and amplifier based on silicon-on-insulator rib waveguide race-track ring resonator with an integrated p-i-n diode structure. Under reverse biasing, we efficiently reduced the nonlinear loss due to two-photon absorption induced free carrier absorption and achieved continuous-wave net gain and stable, single-mode lasing with output power exceeding 30mW and 10% slope efficiency. The laser emission has high spectral purity with a side mode suppression exceeding 70dB and a laser linewidth of <100 kHz. This ring resonator architecture allows for on-chip integration with other silicon photonics components to provide a highly integrated and scaleable monolithic device. Using the ring resonator architecture, we can build a compact, chip scale Raman amplifier that takes advantage of the resonance effect to increase the effective pump power and reduce the device size. Our simulations suggest that a 3dB net gain can be achieved with 4dB less pump power in a 3cm ring compared to a straight waveguide of the same length.

Paper Details

Date Published: 2 October 2006
PDF: 9 pages
Proc. SPIE 6389, Active and Passive Optical Components for Communications VI, 638904 (2 October 2006); doi: 10.1117/12.689338
Show Author Affiliations
Haisheng Rong, Intel Corp. (United States)
Ying-Hao Kuo, Intel Corp. (United States)
Shengbo Xu, Intel Corp. (United States)
Oded Cohen, Intel Corp. (Israel)
Omri Raday, Intel Corp. (Israel)
Mario Paniccia, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6389:
Active and Passive Optical Components for Communications VI
Achyut K. Dutta; Yasutake Ohishi; Niloy K. Dutta; Jesper Moerk, Editor(s)

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