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Proceedings Paper

Ohmic characteristics of Pt and Ni/Au on Mg-doped AlxGa1-xN
Author(s): Hoki Kwon; Bong Koo Kim; Gyong Geun Park; Sung Woo Kim; Jaewan Choi; Jeong Soo Lee; Weon G Jeong
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Paper Abstract

Mg-doped AlxGa1-xN is grown by metal-organic chemical vapor deposition to investigate the Ohmic characteristics of Pt and Ni/Au. The Al solid composition measured by x-ray varies from 0.04 to 0.19, while the atomic concentration of Mg confirmed by secondary ion mass spectroscopy spans from 3x1019 to 1x1020 cm-3. The Ohmic characteristics are measured by current-voltage by varying the Mg activation temperature, Ohmic metal annealing temperature, and annealing time. The specific contact resistance is 3.5 and 7.5x10-5 Ω cm2.with Pt and Ni/Au in p-Al0.085Ga0.915N and p-Al0.14Ga0.86N measured by circular transmission line model, respectively. These are the lowest ever reported in p-AlGaN.

Paper Details

Date Published: 28 September 2006
PDF: 8 pages
Proc. SPIE 6355, Advanced LEDs for Solid State Lighting, 63550J (28 September 2006); doi: 10.1117/12.689268
Show Author Affiliations
Hoki Kwon, LG Electronics Institute of Technology (South Korea)
Bong Koo Kim, LG Electronics Institute of Technology (South Korea)
Gyong Geun Park, LG Electronics Institute of Technology (South Korea)
Sung Woo Kim, LG Electronics Institute of Technology (South Korea)
Jaewan Choi, LG Electronics Institute of Technology (South Korea)
Jeong Soo Lee, LG Electronics Institute of Technology (South Korea)
Weon G Jeong, Sungkyunkwan Univ. (South Korea)


Published in SPIE Proceedings Vol. 6355:
Advanced LEDs for Solid State Lighting
Chang-Hee Hong; Tsunemasa Taguchi; Jung Han; Lianghui Chen, Editor(s)

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