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Proceedings Paper

Analysis and design of high performance Ge-on-Si resonant cavity enhanced PIN photodetectors
Author(s): Jinlin Chen; Zhiping Zhou
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Paper Abstract

A general structure of Ge-on-Si Resonant cavity enhanced (RCE) PIN photodetectors with modified top and bottom mirrors operation at 1.55μm is presented. Resonating mirrors with higher reflectance are obtained. Different cases on the relationship of quantum efficiency and wavelength are discussed in detail. The number of Si-SiO2 layers in top and bottom mirrors for the highest quantum efficiency is analyzed. The frequency response considering both the transit time and the capacitance with different device areas is also simulated. These results offer a complete guideline for designing and fabricating a high speed, high quantum efficiency Ge-on-Si RCE PIN device.

Paper Details

Date Published: 6 October 2006
PDF: 10 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521C (6 October 2006); doi: 10.1117/12.688702
Show Author Affiliations
Jinlin Chen, Huazhong Univ. of Science and Technology (China)
Zhiping Zhou, Huazhong Univ. of Science and Technology (China)
Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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