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Proceedings Paper

High-power wide temperature range (-40°C ~100°C) operation of 1300-nm InGaAsP DFB lasers with asymmetric MQWs
Author(s): Eun-Hwa Lee; Young-Hyun Kim; Yu-Dong Bae; Jae-Myung Baek; Joon-Whan Park; In Kim; Yun-Kyung Oh; Dong-Hoon Jang
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Paper Abstract

We demonstrate 1.25 Gbps 1300 nm InGaAsP/InP DFB lasers employing asymmetric MQWs structures operable over a wide temperature range of -40°C to 100°C, which has an optical power of 10 mW and a side mode suppression ratio (SMSR)and a Fabry-Perot suppression ratio (FPSR) of >30dB.

Paper Details

Date Published: 5 October 2006
PDF: 9 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520M (5 October 2006); doi: 10.1117/12.688467
Show Author Affiliations
Eun-Hwa Lee, Samsung Electronics Co. (South Korea)
Young-Hyun Kim, Samsung Electronics Co. (South Korea)
Yu-Dong Bae, Samsung Electronics Co. (South Korea)
Jae-Myung Baek, Samsung Electronics Co. (South Korea)
Joon-Whan Park, Samsung Electronics Co. (South Korea)
In Kim, Samsung Electronics Co. (South Korea)
Yun-Kyung Oh, Samsung Electronics Co. (South Korea)
Dong-Hoon Jang, Samsung Electronics Co. (South Korea)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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