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Proceedings Paper

A study of the NEA photocathode activation technique on a [GaAs(Zn):Cs]: O-Cs model
Author(s): Wenli Liu; Hui Wang; Benkang Chang; Jijun Zou; Zhi Yang; Pin Gao; Rongguo Fu; Yunsheng Qian
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Paper Abstract

In this paper we review simply the surface models. These models have several technical problems not solved appropriately except for having deficiency themselves. So we present a new negative electron affinity (NEA) photocathode photoelectric emission model: [GaAs (Zn): Cs]: O - Cs. After discussing photocathodes activation technique on the model, we design a activation technique, which increases the Cs current to decrease the first peak in appropriate degree after using smaller Cs current to achieve the first peak of photoemission (GaAs (Zn)-Cs dipole layer), then set out Cs-O alternation and do not end the technique until gaining maximal photoemission (Cs-O-Cs dipole layer), in the photocathodes with GaAs (Zn) (100)2×4 reconstruction surface. In the present material configuration and level of technique, it is difficult that the integral sensitivity of cathode excess 3500 μA/lm. However, it is likely to excess 4000 μA/lm by varied doping As-rich GaAs (Zn) (100)2×4 reconstruction surface.

Paper Details

Date Published: 6 October 2006
PDF: 7 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63523A (6 October 2006); doi: 10.1117/12.688317
Show Author Affiliations
Wenli Liu, Chinese Weapon Science Institute for Research (China)
Hui Wang, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)
Jijun Zou, Nanjing Univ. of Science and Technology (China)
East China Institute of Technology (China)
Zhi Yang, Nanjing Univ. of Science and Technology (China)
Pin Gao, Nanjing Univ. of Science and Technology (China)
Rongguo Fu, Nanjing Univ. of Science and Technology (China)
Yunsheng Qian, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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