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Proceedings Paper

Development of 3.7μm InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy
Author(s): M. Yin; A. Krier; R. Jones; S. Krier; D. Campbell
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Paper Abstract

We report on the liquid phase epitaxy (LPE) growth of an optimized double heterostructure (DH) 3-4 μm laser and the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro-luminescence characteristics of prototype DH & QW devices. The optimized 5 epi-layer diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 μm at 170 K with a threshold current density as low as 118 A/cm2 at 85 K. Coherent emission was obtained up to 210 K. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.

Paper Details

Date Published: 5 October 2006
PDF: 6 pages
Proc. SPIE 6397, Technologies for Optical Countermeasures III, 639707 (5 October 2006); doi: 10.1117/12.688254
Show Author Affiliations
M. Yin, Lancaster Univ. (United Kingdom)
A. Krier, Lancaster Univ. (United Kingdom)
R. Jones, Lancaster Univ. (United Kingdom)
S. Krier, Lancaster Univ. (United Kingdom)
D. Campbell, Lancaster Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 6397:
Technologies for Optical Countermeasures III
David H. Titterton, Editor(s)

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