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Proceedings Paper

Nanocrystal silicon light emitting devices
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Paper Abstract

An electrically driven light emission from silicon is a long-standing problem in silicon photonics. Recently, significant progress has been made using silicon quantum dots embedded in silicon nitride thin films, transparent doping layers and electrodes, and surface modified structures. This paper provides an overview of progress in the device physics and fabrications of the nanocrystal silicon light emitting diodes including new device structures to improve the light extraction efficiency as well as highlights in growth of silicon quantum dots and their quantum confinement effects.

Paper Details

Date Published: 6 October 2006
PDF: 13 pages
Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521T (6 October 2006); doi: 10.1117/12.688243
Show Author Affiliations
Gun Yong Sung, Electronics and Telecommunications Research Institute (South Korea)
Kyung-Hyun Kim, Electronics and Telecommunications Research Institute (South Korea)
Chul Huh, Electronics and Telecommunications Research Institute (South Korea)
Jae Heon Shin, Electronics and Telecommunications Research Institute (South Korea)


Published in SPIE Proceedings Vol. 6352:
Optoelectronic Materials and Devices
Yong Hee Lee; Fumio Koyama; Yi Luo, Editor(s)

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