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Proceedings Paper

Rigorous simulation of 3D masks
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Paper Abstract

We perform 3D lithography simulations by using a finite-element solver. To proof applicability to real 3D problems we investigate DUV light propagation through a structure of size 9μm x 4μm x 65nm. On this relatively large computational domain we perform rigorous computations (No Hopkins) taking into account a grid of 11 x 21 source points with two polarization directions each. We obtain well converged results with an accuracy of the diffraction orders of about 1%. The results compare well to experimental aerial imaging results. We further investigate the convergence of 3D solutions towards quasi-exact results obtained with different methods.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 63494Z (20 October 2006); doi: 10.1117/12.687816
Show Author Affiliations
Sven Burger, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Roderick Köhle, Qimonda AG (Germany)
Lin Zschiedrich, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Hoa Nguyen, Qimonda Dresden GmbH (Germany)
Frank Schmidt, Zuse Institute Berlin (Germany)
JCMwave GmbH (Germany)
Reinhard März, JCMwave GmbH (Germany)
Infineon Technologies AG (Germany)
Christoph Nölscher, Qimonda Dresden GmbH (Germany)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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