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Proceedings Paper

High-transmission attenuated phase-shift mask for ArF immersion lithography
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Paper Abstract

The attenuated phase-shift mask (att. PSM) is one of resolution enhancement technologies (RET) and has been widely adopted for several device layers. And the high-transmission att. PSM, which has various structures and transmittances, can be expected to have the advantages in process window. In this paper, the lithographic performances (Contrast, MEEF and DOF) of high-T att. PSM were evaluated by using the 3D electro-magnetic field simulator. The results showed that high-T att. PSM has better MEEF and partially better DOF than those of 6%-transmission MoSi type. As the transmittance is getting higher, the smaller line CD is needed for OPC adjustment especially at narrow pitch. In respect of film structure, it is found that there is no large difference among three high-T att. PSMs except for MEEF at specific pitch. Remaining chrome on the high-T films causes the trade-off between contrast and MEEF. The simulation results are compared with AIMS results measured by AIMSTM 45-193i of Carl Zeiss. The AIMS results of actual masks agree with no-Hopkins mode simulation very well, while they do not agree with Hopkins mode simulation especially at narrow pitch. Because the azimuthal polarization does not cause contrast loss, the differences between AIMS mode (conventional) and Scanner mode (vector effect emulation) are small.

Paper Details

Date Published: 20 October 2006
PDF: 10 pages
Proc. SPIE 6349, Photomask Technology 2006, 63491V (20 October 2006); doi: 10.1117/12.686998
Show Author Affiliations
Yosuke Kojima, Toppan Printing Co., Ltd. (Japan)
Takashi Mizoguchi, Toppan Printing Co., Ltd. (Japan)
Takashi Haraguchi, Toppan Printing Co., Ltd. (Japan)
Toshio Konishi, Toppan Printing Co., Ltd. (Japan)
Yoshimitsu Okuda, Toppan Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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