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Proceedings Paper

Point cleaning of mask blanks for extreme ultraviolet lithography
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Paper Abstract

The feasibility of removing defects from the surface of extreme ultraviolet (EUV) substrates by nanomachining is being investigated. A commercially available atomic force microscope (AFM) based photomask repair tool was used. A specific class of defects which has resisted all other removal techniques was targeted. Three AFM probes of varying sharpness were evaluated. All of the probes removed the majority of each but fell short of achieving the desired 2006 high spatial frequency roughness specification of 0.2nm. Results reported are preliminary; future work will focus on optimization of scanning parameters and tip geometry targeting specific residual defects reported in the text.

Paper Details

Date Published: 20 October 2006
PDF: 9 pages
Proc. SPIE 6349, Photomask Technology 2006, 63492K (20 October 2006); doi: 10.1117/12.686764
Show Author Affiliations
Mike Brown, UAlbany (United States)
John Hartley, UAlbany (United States)
Sean Eichenlaub, Sematech Mask Blank Development Ctr. (United States)
Abbas Rastegar, Sematech Mask Blank Development Ctr. (United States)
Patricia Marmillion, Sematech Mask Blank Development Ctr. (United States)
Ken Roessler, Rave LLC (United States)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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