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Proceedings Paper

Chemical flare long-range proximity effects in photomask manufacturing with chemically amplified resists
Author(s): Daniel Sullivan; Yusuke Okawa; Kazuhiko Sugawara; Zdenek Benes; Jun Kotani
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Paper Abstract

As critical dimension uniformity requirements tighten for advanced technology nodes, it becomes increasingly important to characterize and correct for systematic sources of critical dimension error in mask manufacturing. A long range proximity effect has been previously reported in the industry to occur in chemically amplified resists that appears to be related to the develop process and we call this phenomenon chemical flare. Several attempts to modulate this effect have been characterized and at least one develop nozzle modification has been found to reduce chemical flare by ~50%. In addition, develop time, develop and rinse processes, and top anti-reflective coatings have been evaluated as methods of minimizing chemical flare effects in e-beam lithography applications. Positive and negative chemically amplified ebeam resists have been evaluated and characterized for this effect.

Paper Details

Date Published: 20 October 2006
PDF: 9 pages
Proc. SPIE 6349, Photomask Technology 2006, 634905 (20 October 2006); doi: 10.1117/12.686732
Show Author Affiliations
Daniel Sullivan, IBM (United States)
Yusuke Okawa, Toppan Electronics, Inc. (United States)
Kazuhiko Sugawara, Toppan Electronics, Inc. (United States)
Zdenek Benes, IBM (United States)
Jun Kotani, Toppan Electronics, Inc. (United States)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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