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Proceedings Paper

Managing high-accuracy and fast convergence in OPC
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Paper Abstract

The transition to the 65nm technology node requires improved methodologies for model based optical proximity correction. The approaches used for previous generations might not be able to deliver the high accuracy which is necessary for gate patterning on high performance or low leakage circuits. A new categorization scheme for OPC fragments will be introduced, which then allows independent optimization for various OPC tool parameters. The feasibility of this technique will be demonstrated by quantifying the OPC convergence through iterations, which emphasizes the performance gain in OPC accuracy and runtime.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 634924 (20 October 2006); doi: 10.1117/12.686725
Show Author Affiliations
Klaus Herold, Infineon Technologies NA Corp. (United States)
Norman Chen, AMD Inc. (United States)
Ian P. Stobert, IBM Systems and Technology Group (United States)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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