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Proceedings Paper

The effect of sub-layer condition on the OPC model
Author(s): Jaeyoung Choi; Jaehyun Kang; Yeonah Shim; Kyunghee Yun; Junseok Lee; Yongseok Lee; Keeho Kim
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Paper Abstract

OPC(Optical Proximity Correction) has become an indispensable tool used in deep sub-wavelength lithograph process enabling highly accurate CD (Critical Dimension) control as design rule shrinks. Current model based OPC is a combination of optical and process model to predict lithography process. At this time, the accurate OPC model can be made by accurate empirical measurement data. Therefore empirical measurement data affects OPC model directly. In the case of gate layer, it affects to device performance significantly and CD spec is controlled tightly. Because gate layer is hanging on between active area and sti area, the gate CD is affected by different sub layer stack and step height. This paper will analyze that the effect of sub layer on the OPC model and show difference EPE value results at the patterns such as iso line, iso space,pitch, line end and T_junction between poly and gate model using constant threshold model.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 63494O (20 October 2006); doi: 10.1117/12.686653
Show Author Affiliations
Jaeyoung Choi, Dongbu Electronics (South Korea)
Jaehyun Kang, Dongbu Electronics (South Korea)
Yeonah Shim, Dongbu Electronics (South Korea)
Kyunghee Yun, Dongbu Electronics (South Korea)
Junseok Lee, Dongbu Electronics (South Korea)
Yongseok Lee, Dongbu Electronics (South Korea)
Keeho Kim, Dongbu Electronics (South Korea)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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