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Proceedings Paper

Variable shaped beam writing throughput at the 45nm node and beyond
Author(s): A. Sowers; M. Shumway; M. Kamna; N. Wilcox; M. Vernon; D. Cole; M. Chandramouli
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Paper Abstract

Aggressive 193nm optical lithography solutions have in turn led to increasingly complex model-based OPC methodologies. This complexity married with the inevitable march of Moore's Law has produced a figure count explosion at the mask writer level. Variable shaped beam equipment manufacturers have tried to mollify the impact of this figure count explosion on the write time by the introduction of new technologies such as increased beam current density, faster DAC amplifiers and more efficient stage algorithms. Despite these efforts, mask manufacturers continue to explore ways of increasing writer throughput and available capacity. This study models the impact of further improvements in beam current density and settling times. Furthermore, this model will be used to prescribe the necessary improvement rates needed to keep pace with the shot count trends extending beyond the 45nm node.

Paper Details

Date Published: 20 October 2006
PDF: 7 pages
Proc. SPIE 6349, Photomask Technology 2006, 63490V (20 October 2006); doi: 10.1117/12.686566
Show Author Affiliations
A. Sowers, Intel Corp. (United States)
M. Shumway, Intel Corp. (United States)
M. Kamna, Intel Corp. (United States)
N. Wilcox, Intel Corp. (United States)
M. Vernon, Intel Corp. (United States)
D. Cole, Intel Corp. (United States)
M. Chandramouli, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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