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Proceedings Paper

Novel cleaning techniques to achieve defect-free photomasks for sub-65-nm nodes
Author(s): Jin Ho Ryu; Dong Wook Lee; Ji Sun Ryu; Sang Pyo Kim; Oscar Han
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Paper Abstract

The ability to eliminate the critical source of haze contamination which can be derived from the cleaning chemistry residues and mass production environment has become a major challenge for 193 nm photolithography in semiconductor industry. Furthermore, as the specification for pattern generation on photomask becomes tighter, it is getting harder and harder to eliminate defects with both minimal structural damage and preservation of photophysical properties. We designed for the smart cleaning strategy to achieve the defect-free photomasks as a concern of above current issue with a combination of well-known cleaning technology, such as using the collective effects of ozonated water (DIO3) for the alternative to conventional clean (SPM/SC1) and UV/O3 treatment for the control of sulfate concentration. In addition to photomask clean, these strategies are also used for photoresist stripping. As well as the final cleaning process, it is a rational strategy that judicious modification of inter-process clean. Specially, that kind of view is focused on the after-development clean (ADC) process which mainly eliminated the source of fatal defects on the mask, such as pattern bridge following dry etch process. In this paper we will propose a novel cleaning strategy for the elimination of potential source of haze formation and fatal defects.

Paper Details

Date Published: 20 October 2006
PDF: 11 pages
Proc. SPIE 6349, Photomask Technology 2006, 63492V (20 October 2006); doi: 10.1117/12.686545
Show Author Affiliations
Jin Ho Ryu, Hynix Semiconductor Inc. (South Korea)
Dong Wook Lee, Hynix Semiconductor Inc. (South Korea)
Ji Sun Ryu, Hynix Semiconductor Inc. (South Korea)
Sang Pyo Kim, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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