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Proceedings Paper

Self-aligned resist patterning by backside flood exposure in photomask
Author(s): Taejoong Ha; Byunggu Gyun; Oscar Han
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Paper Abstract

As a minimum pattern size on photomask decreases, a patterning accuracy is very important. Especially pattern repair needs the perfect positioning accuracy. But the positioning accuracy of equipment stage has its limit and therefore cannot meet a required accuracy. We can form the resist patterns with no positioning error on Cr or MoSiN patterns of photomask. We named this process 'the self-aligned resist patterning' and investigated the various patterning performance. In this process, a photoresist is coated on Cr/MoSiN pattern side and the photomask is exposed to KrF light on a backside and is developed. The principle of this self-aligned resist patterning is the difference between the transmittances of Cr and quartz. This self-aligned resist patterning can form the resist patterns on sub-patterns of Cr or MoSiN which had been formed on photomask. First of all, the alignment accuracy of this process is perfect and the alignment error is zero.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 63494D (20 October 2006); doi: 10.1117/12.686540
Show Author Affiliations
Taejoong Ha, Hynix Semiconductor Inc. (South Korea)
Byunggu Gyun, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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