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Proceedings Paper

The specification of the 45-nm node photomask repair process
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Paper Abstract

The shrink of device node to 65 and 45nm node masks mask manufacturers paying their attention to repair process in terms of mask cost efficiency. Thus, it is very important to define the repair performance accurately and introduce adequate tools timely. Usually the repair performance has been expressed as an edge placement error, transmittance change and quartz damage. We have used the measuring tools such as CD SEM, AFM and AIMS to measure those factors and the 2D simulator, Solid C to predict the repair performance. In this case, 3D topographical effect is not considered. However, the 3D topography of pattern becomes quite important for 45 nm node or less. ArF immersion lithography is the strongest candidate for the 45 nm node. The immersion technology makes it possible to use of hyper NA systems1. Hyper NA will increase the polarization effect of illumination source2. Therefore, the topography of pattern is quite important with respect to the intensity and the polarization of various diffraction orders. This paper presents repair specifications based on the Solid E 3D simulator of the 45 nm node.

Paper Details

Date Published: 20 October 2006
PDF: 9 pages
Proc. SPIE 6349, Photomask Technology 2006, 63494H (20 October 2006); doi: 10.1117/12.686509
Show Author Affiliations
Moon Gyu Sung, Samsung Electronics Co., Ltd. (South Korea)
Sungmin Huh, Samsung Electronics Co., Ltd. (South Korea)
Byung Cheol Cha, Samsung Electronics Co., Ltd. (South Korea)
Sungwoon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woosung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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