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Proceedings Paper

Antireflection coating for photo-pumped IV-VI semiconductor light-emitting devices
Author(s): D. Ray; Z. P. Guan; F. Zhao; S. Jain; S. Mukherjee; D. Li; Z. Shi
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Paper Abstract

An antireflection coating material for optically pumped group IV-VI lead-chalcogenide semiconductor light emitting devices has been proposed. The coating has been used to increase the photo-pumping efficiency. Theoretical model showed that with the proposed AR coating with a quarter wavelength thickness, 0.008% reflectivity could be achieved in the 980nm-982nm wavelength region. The antireflection property of the coated film was investigated by FTIR-spectroscopic reflectance measurement. Room temperature continuous-wave photoluminescence measurement from AR-coated multiple quantum well structures showed up to 4-times increment in the PL intensity, compared to uncoated ones.

Paper Details

Date Published: 13 October 2006
PDF: 5 pages
Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636816 (13 October 2006); doi: 10.1117/12.686486
Show Author Affiliations
D. Ray, Univ. of Oklahoma (United States)
Z. P. Guan, Univ. of Oklahoma (United States)
F. Zhao, Univ. of Oklahoma (United States)
S. Jain, Univ. of Oklahoma (United States)
S. Mukherjee, Univ. of Oklahoma (United States)
D. Li, Univ. of Oklahoma (United States)
Z. Shi, Univ. of Oklahoma (United States)


Published in SPIE Proceedings Vol. 6368:
Optoelectronic Devices: Physics, Fabrication, and Application III
Joachim Piprek; Jian Jim Wang, Editor(s)

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