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Proceedings Paper

Study of the beam blur and its effect on the future mask fabrication
Author(s): Sanghee Lee; Sungho Park; Mihye Ahn; Jonggul Doh; Sungyoon Kim; Byunggook Kim; Seongwoon Choi; Woosung Han
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Paper Abstract

For the half pitch below 45nm, the required sub-resolution feature size is about to be 60nm, and the uniformity of dense lines to be below 3.4nm for the mask fabrication. To achieve this requirement, the reduction of beam blur is necessary. On the mask patterning using 50keV electron beam, the beam blurring due to coulomb interaction and resist characteristics is the main effect of the pattern image degradation and the limit of CD uniformity. In this report, we present the effect of the beam blur induced by coulomb interaction and resist. And we report the recent simulated and experimental results on the resolution change depending on bream blur and design node. Finally, we conclude that the reduction of beam blur can improve the mask quality and there is a compatible condition between the beam blur and the mask fabrication.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 63490X (20 October 2006); doi: 10.1117/12.686472
Show Author Affiliations
Sanghee Lee, Samsung Electronics Co., Ltd. (South Korea)
Sungho Park, Samsung Electronics Co., Ltd. (South Korea)
Mihye Ahn, Samsung Electronics Co., Ltd. (South Korea)
Jonggul Doh, Samsung Electronics Co., Ltd. (South Korea)
Sungyoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Byunggook Kim, Samsung Electronics Co., Ltd. (South Korea)
Seongwoon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woosung Han, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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