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Proceedings Paper

CD measurement evaluation on periodic patterns between optic tools and CD-SEM
Author(s): Yongkyoo Choi; Munsik Kim; Sunghyun Oh; Oscar Han
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Paper Abstract

As feature size is shrinking and MEEF (Mask error enhancement factor) is increasing, CD measurement accuracy is more important, and CD SEM is widely used to replace optic tools because of their resolution. But CD-SEM is not representing the effect of Cr profile or transmittance of light which is transferred to wafer. Recently, new OCD (optic CD) tool which use scatterometry (Spectroscopic Ellipsometry) *1) is introduced to compensate the demerit of SEM of low through-put and reflected surface information of mask. This scatterometry tool can be used only on periodic pattern like DRAM. And this tool must be calibrated on each pattern type and shape. This calibration is the barrier to use this scatterometry method to mask process where all masks are processed one time. In this work, new optical CD measurement method which use conventional optic microscope of transmitted and reflected light with high resolution lens of DUV on periodic patterns is introduced. To enhance the accuracy of measurement, interpolating method and FFT (Fast Fourier Transform) are used. CD measurement results of linearity by optic CD, SE and CD-SEM were compared on several patterns. And CD variations on full field of image were evaluated on L/S patterns and active layer of DRAM.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 63491N (20 October 2006); doi: 10.1117/12.686461
Show Author Affiliations
Yongkyoo Choi, Hynix Semiconductor (South Korea)
Munsik Kim, Hynix Semiconductor (South Korea)
Sunghyun Oh, Hynix Semiconductor (South Korea)
Oscar Han, Hynix Semiconductor (South Korea)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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