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Proceedings Paper

OPC to account for thick mask effect using simplified boundary layer model
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Paper Abstract

We present simplified symmetric boundary layer model (BLM) for Optical Proximity Correction (OPC) in order to account for thick (or 3D or topographic) mask effect. In this approach, near-field mask image which is quite different from original mask pattern due to mask topography is approximated as the original pattern and boundary layer around it. In this work, the boundary layer is determined as such that residual critical dimension (CD) error between measured CD and modeled CD from the BLM is minimized for various types of features. In case of sub-50 nm memory patterning, this BLM shows sufficient accuracy that root mean square of the residual CD is as small as 4.3 nm. Also, OPC speed with BLM is reasonably fast as the OPC time with BLM increases as only around twice as the conventional OPC time without BLM, which is acceptable in practice.

Paper Details

Date Published: 20 October 2006
PDF: 8 pages
Proc. SPIE 6349, Photomask Technology 2006, 63493I (20 October 2006); doi: 10.1117/12.686394
Show Author Affiliations
Sangwook Kim, Samsung Electronics Co., Ltd. (South Korea)
Young-Chang Kim, Samsung Electronics Co., Ltd. (South Korea)
Sungsoo Suh, Samsung Electronics Co., Ltd. (South Korea)
Sook Lee, Samsung Electronics Co., Ltd. (South Korea)
Sungwoo Lee, Samsung Electronics Co., Ltd. (South Korea)
Sukjoo Lee, Samsung Electronics Co., Ltd. (South Korea)
Hanku Cho, Samsung Electronics Co., Ltd. (South Korea)
Jootae Moon, Samsung Electronics Co., Ltd. (South Korea)
Jonathan Cobb, Synopsys, Inc. (United States)
Sooryong Lee, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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