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Proceedings Paper

Evaluation of bi-layer TaSix absorber on buffer for EUV mask
Author(s): Koichiro Kanayama; Shinpei Tamura; Yasushi Nishiyama; Masashi Kawashita; Tadashi Matsuo; Akira Tamura; Susumu Nagashige; Kenji Hiruma; Doohoon Goo; Iwao Nishiyama
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Paper Abstract

We evaluated TaSix-based bi-layer absorber on ZrSi-based buffer for EUV mask, especially considering the possibility of ZrSi-based film as a combined buffer and capping layer. Since ZrSi-based film has both high dry-etching resistance and EUV transparency, it has potentiality to work as a combined capping and buffer layer. AFM machining repair of bi-layer TaSix absorber on ZrSi-based buffer can be performed to good profile. Printing evaluation showed that over-repair into buffer layer did not affect significantly to wafer CD. FIB (10keV) repair of bi-layer TaSix absorber on ZrSi-based buffer needs improvement for side-wall profile and distinguishable evaluation from implanted Ga+ effect in more detail. Effect of FIB (10keV) scan with ordinary repair process seems to be at least smaller than 10%.

Paper Details

Date Published: 20 October 2006
PDF: 11 pages
Proc. SPIE 6349, Photomask Technology 2006, 63493A (20 October 2006); doi: 10.1117/12.686388
Show Author Affiliations
Koichiro Kanayama, Toppan Printing Co., Ltd. (Japan)
Shinpei Tamura, Toppan Printing Co., Ltd. (Japan)
Yasushi Nishiyama, Toppan Printing Co., Ltd. (Japan)
Masashi Kawashita, Toppan Printing Co., Ltd. (United States)
Tadashi Matsuo, Toppan Printing Co., Ltd. (Japan)
Akira Tamura, Toppan Printing Co., Ltd. (Japan)
Susumu Nagashige, Toppan Printing Co., Ltd. (Japan)
Kenji Hiruma, Association of Super-Advanced Electronics Technologies (Japan)
Doohoon Goo, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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