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Proceedings Paper

Deep subwavelength mask assist features and mask errors printability in high NA lithography
Author(s): Wen-Hao Cheng; Mindy Lee; Vikram Tolani; Mark Nakahma; Bob Gleason
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Paper Abstract

As silicon processes scale toward the 45 nm node using conventional 0.25 magnification, widths of sub-resolution assist feature (SRAF) and printable defects on photomasks drop far below the ArF laser wavelength. Adoption of polarized illumination and higher numerical aperture (NA) could invalidate the scaling relations we used in the past to determine which small mask features or errors will print on wafers. Polarization interaction with small mask features may also plays a role in mask inspection. As mask features shrink below the wavelength, differences between the optical systems used for inspection and printing become more significant, and may affect the rules for disposition of inspection results. The data presented here combines experimental results from high NA imaging of sub-wavelength SRAF and defects, with rigorous calculation of their images based on vector diffraction. The printability of these deep subwavelength mask feature determines the requirements of optical model's rigorousness for SRAF design rule and also mask defect inspection and repair capabilities.

Paper Details

Date Published: 20 October 2006
PDF: 7 pages
Proc. SPIE 6349, Photomask Technology 2006, 63494W (20 October 2006); doi: 10.1117/12.686378
Show Author Affiliations
Wen-Hao Cheng, Intel Corp. (United States)
Mindy Lee, Intel Corp. (United States)
Institute of Optics, Univ. of Rochester (United States)
Vikram Tolani, Intel Corp. (United States)
Mark Nakahma, Intel Corp. (United States)
Bob Gleason, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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