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Proceedings Paper

Development of chiral and achiral double negative metamaterials in the THz regime
Author(s): N. Wongkasem; A. Akyurtlu; K. A. Marx
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Paper Abstract

Materials that support strong, tunable magnetic and electric properties in the terahertz (THz) frequency range have a wide range of applications including sue in: security screening, medical imaging, bio-sensing, remote sensing, metrology, and spectroscopy. The main challenge in assembling metamaterials (MTM) aimed at higher frequency applications is the difficulty of the fabrication process. This is because metamaterials are composed of inclusions that are scaled down in size to operate at high frequencies. Consequently, a model of spilt-ring resonator(SRR)/wire MTM is proposed which can create a double-negative (DNG) passband approximately two and a half times higher than those of the conventional SRR/wire structures, by using the same dimensions. Increasing the size of the repeating structure will significantly improve the ease of fabrication when we deal with devices at high frequencies. In this paper, we demonstrate the theoretical design and experimental validations of DNG metamaterials in the THz regime. Furthermore, a novel structure is presented, which demonstrates not only DNG properties but also chirality. The form of handedness sensitive rotation of the polarization state and elliptization of visible light diffracted from the chiral structures are properties attractive to the optoelectronic technologies such as photonic bandgap crystals and microsculptured films.

Paper Details

Date Published: 1 November 2006
PDF: 8 pages
Proc. SPIE 6373, Terahertz Physics, Devices, and Systems, 63730Z (1 November 2006); doi: 10.1117/12.686254
Show Author Affiliations
N. Wongkasem, Univ. of Massachusetts, Lowell (United States)
A. Akyurtlu, Univ. of Massachusetts, Lowell (United States)
K. A. Marx, Univ. of Massachusetts, Lowell (United States)

Published in SPIE Proceedings Vol. 6373:
Terahertz Physics, Devices, and Systems
Mehdi Anwar; Anthony J. DeMaria; Michael S. Shur, Editor(s)

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