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Proceedings Paper

Ultrafast all-optical bistability in AlGaAs photonic crystals
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Paper Abstract

We present the design and fabrication of an all-optical bistable device in AlGaAs. The material is known to have a nonlinear figure-of-merit that is in larger silicon and thus well suited to nonlinear experiments. We employ theoretical analysis consisting of both analytical models and finite-difference time-domain (FDTD) methods to ensure robust design and to estimate the power threshold of the proposed device. The proposed nanocavity experiment suggests low powers (~102 μW) and ultra fast switching (~ps) on chip limited only by photon lifetime. This is an improvement over silicon based experiments, which have demonstrated ~ 100 nanosecond responses but intrinsically bounded by free-carrier dynamics [12]. In this manuscript, we will elaborate on theoretical and experimental considerations required to implement a low power, ultrafast bistable device that forms a fundamental building block in all-optical logic operations.

Paper Details

Date Published: 2 October 2006
PDF: 7 pages
Proc. SPIE 6393, Nanophotonics for Communication: Materials, Devices, and Systems III, 63930J (2 October 2006); doi: 10.1117/12.686223
Show Author Affiliations
Chad Husko, Columbia Univ. (United States)
Chee Wei Wong, Columbia Univ. (United States)


Published in SPIE Proceedings Vol. 6393:
Nanophotonics for Communication: Materials, Devices, and Systems III
Martina Gerken; Nibir K. Dhar; Achyut K. Dutta; M. Saif Islam, Editor(s)

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