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Proceedings Paper

Design optimization of high-speed optical modulators
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Paper Abstract

The effects of design parameters on the modulating voltage and optical bandwidth are reported for lithium niobate, GaAs and polymer electro-optic modulators by using rigorous numerical modelling techniques. It is shown that by etching lithium niobate, the switching voltage can be reduced and the bandwidth improved. For a GaAs-based modulator using higher aluminium content in the buffer layer, the device length can be shortened for a given optical loss. It is also observed that the dielectric loss and impedance matching play a key role in velocity-matched high-speed modulators with low conductor loss. It is also indicated in the work that by using tantalium pentoxide coating, velocity matching can be achieved for GaAs modulators. The effects of a non-vertical side wall on the polarisation conversion and single mode operation and the bending loss of polymer rib waveguide for electro-optical modulators are also reported.

Paper Details

Date Published: 2 October 2006
PDF: 12 pages
Proc. SPIE 6389, Active and Passive Optical Components for Communications VI, 63890X (2 October 2006); doi: 10.1117/12.686040
Show Author Affiliations
B. M. Azizur Rahman, City Univ. London (United Kingdom)
Shyqyri Haxha, Univ. of Kent (United Kingdom)
Vesel Haxha, City Univ. London (United Kingdom)
Kenneth T. V. Grattan, City Univ. London (United Kingdom)


Published in SPIE Proceedings Vol. 6389:
Active and Passive Optical Components for Communications VI
Achyut K. Dutta; Yasutake Ohishi; Niloy K. Dutta; Jesper Moerk, Editor(s)

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