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Proceedings Paper

Optically pumped Si emitting device for midinfrared band
Author(s): V. K. Malyutenko; S. V. Chyrchyk
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Paper Abstract

In this report, fundamentals, design, fabrication technology, and parameters are presented for contactless Si photonic emitter operated in the 3-5 um atmosphere transparency window at well above room temperature. To bypass the material band structure limitation, we utilized the above-bandgap light-induced free carrier thermal emission as a way to monitor the below-bandgap radiation that falls into 3 to 5 μm band (light down conversion). Two-facet external power conversion efficiency up to 5% is observed at T~500 K with further improvement to be expected. The device application to the IR dynamic scene simulation as well as it pros and cons in respect to thermal emitters and IR LEDs are also considered.

Paper Details

Date Published: 12 October 2006
PDF: 9 pages
Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636803 (12 October 2006); doi: 10.1117/12.685998
Show Author Affiliations
V. K. Malyutenko, Lashkaryov Institute of Semiconductor Physics (Ukraine)
S. V. Chyrchyk, Lashkaryov Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 6368:
Optoelectronic Devices: Physics, Fabrication, and Application III
Joachim Piprek; Jian Jim Wang, Editor(s)

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