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Proceedings Paper

Numerical study for 1.55-μm AlGaInAs/InP semiconductor lasers
Author(s): Bo-Ting Liou; Sheng-Horng Yen; Ming-Wei Yao; Mei-Ling Chen; Yen-Kuang Kuo; Shu-Hsuan Chang
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Paper Abstract

Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-μm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×1023 m-3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K~350 K, 300 K~330 K, and 330 K~350 K, respectively.

Paper Details

Date Published: 13 October 2006
PDF: 9 pages
Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636814 (13 October 2006); doi: 10.1117/12.685959
Show Author Affiliations
Bo-Ting Liou, Hsiuping Institute of Technology (Taiwan)
Sheng-Horng Yen, National Changhua Univ. of Education (Taiwan)
Ming-Wei Yao, National Changhua Univ. of Education (Taiwan)
Mei-Ling Chen, National Changhua Univ. of Education (Taiwan)
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)
Shu-Hsuan Chang, National Changhua Univ. of Education (Taiwan)


Published in SPIE Proceedings Vol. 6368:
Optoelectronic Devices: Physics, Fabrication, and Application III
Joachim Piprek; Jian Jim Wang, Editor(s)

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