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Proceedings Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography
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Paper Abstract

Each generation of semiconductor device technology drives many new and interesting resolution enhancement technologies (RET). As minimum feature size of semiconductor devices have shrunk, the exposure wavelength has also progressively shrunk. The 193 nm lithography for low-k1 process has increased the appearance of progressive defects on masks often known as haze or crystal growth. Crystal growth on a mask surface has become an increasing issue as the industry has adopted a 193 nm wavelength in order to increase lithographic resolution and print ever decreasing device line width. Haze is known to be a growing defect on photomask as a result of increased wafer lithography exposure and photochemical reactions induced by combination of chemical residuals on the mask surface. We build experimental system to create and detect the haze growth. A photomask is enclosed in a glove box where the atmosphere and exposure conditions are controlled and monitored throughout the exposure processing. A test photomask is exposed to accumulate the dose of laser radiation. And then spectroscopic ellipsometry and metallographic microscope techniques are used to check the surface conditions of the masks before and after the laser exposure. We found that spectroscopic ellipsometry measurement values of Δ and Ψ were changed. The results of the spectroscopic ellipsometry analysis show the change of the haze thickness on mask surface. Thickness and roughness of the mask surface is increased with the exposure. This means that haze grows on the mask surface by the exposure. Masks become useless due to transmission loss or defect generation, which is directly related to the formation of the haze. The haze causes the increase of mask thickness, transmission drop and affects the formation of pattern. So, we investigated the linewidth variation and the process window as a function of haze size effect with Solid-E of Sigma-C.

Paper Details

Date Published: 20 October 2006
PDF: 10 pages
Proc. SPIE 6349, Photomask Technology 2006, 63492T (20 October 2006); doi: 10.1117/12.685941
Show Author Affiliations
Sung-Jin Kim, Hanyang Univ. (South Korea)
Jin-Baek Park, Hanyang Univ. (South Korea)
Sung-Hyuck Kim, Samsung Electronics Co., Ltd. (South Korea)
Hye-Young Kang, Samsung Electronics Co., Ltd. (South Korea)
Young-Min Kang, Samsung Electronics Co., Ltd. (South Korea)
Seung-Wook Park, Samsung Electronics Co., Ltd. (South Korea)
Ilsin An, Samsung Electronics Co., Ltd. (South Korea)
Hye-Keun Oh, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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