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Proceedings Paper

Current status of Mo-Si multilayer formation in ASET for low-defect-density mask blanks for EUV lithography
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Paper Abstract

To find the most suitable setup of the Mo and Si targets and substrate for the formation of Mo-Si multilayers with a low defect density, three deposition configurations (upward, horizontal, and off-axis) for magnetron sputtering (MS) were studied. It was found that the horizontal configuration yielded the lowest defect count and was also the best for ion beam sputtering (IBS). A defect density as low as 1 defect/cm2 has been achieved for Mo-Si multilayers grown by IBS or MS. A new approach to reducing the thickness of the interface layer between Mo and Si layers that involves the use of an assisted ion beam (AIB) was found to be effective. Transmission electron microscopy revealed that, during MS, AIB treatment of a Si surface before deposition of a Mo layer reduced the thickness of the interface layer to zero. Angle-dependent X-ray diffraction measurements of multilayers showed sharp reflection peaks, indicating considerable improvement in the interface structure.

Paper Details

Date Published: 20 October 2006
PDF: 10 pages
Proc. SPIE 6349, Photomask Technology 2006, 634937 (20 October 2006); doi: 10.1117/12.685819
Show Author Affiliations
Kenji Hiruma, Association of Super-Advanced Electronics Technologies (Japan)
Yuusuke Tanaka, Association of Super-Advanced Electronics Technologies (Japan)
Shinji Miyagaki, Association of Super-Advanced Electronics Technologies (Japan)
Hiromasa Yamanashi, Association of Super-Advanced Electronics Technologies (Japan)
Iwao Nishiyama, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 6349:
Photomask Technology 2006
Patrick M. Martin; Robert J. Naber, Editor(s)

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